q?v~zy??q?v?_ra]?????qcabgq HFS2N65FS HFS2N65FS 650v n-channel mosfet oct 2016 ? originative new design ? very low intrinsic capacitances ? excellent switching characteristics ? 100% avalanche tested ? single gauge package parameter value unit bv dss 650 v i d 2a r ds(on), typ 4
qg ,typ 6.5 nc key parameters features symbol parameter value unit v dss drain-source voltage 650 v i d drain current ? continuous (t c = 25 e ) 2.0 * a drain current ? continuous (t c = 100 e ) 1.3 * a i dm drain current ? pulsed (note 1) 8.0 * a v gs gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 110 mj i ar avalanche current (note 1) 2.0 a e ar repetitive avalanche energy (note 1) 5.4 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 e ) - derate above 25 e 23 w 0.18 w/ e t j , t stg operating and storage temperature range -55 to +150 e t l maximum lead temperature for soldering purposes, 1/8? from case for 5 seconds 300 e symbol parameter value unit r jc thermal resistance, junction-to-case, max. 5.5 e /w r ja thermal resistance, junction-to-ambient, max. 62.5 e /w * drain current limited by maximum junction temperature thermal resistance characteristics absolute maximum ratings t c =25 e unless otherwise specified to-220fs symbol g d s
q?v~zy??q?v?_ra]?????qcabgq HFS2N65FS symbol parameter test conditions min typ max unit on characteristics v gs gate threshold voltage v ds = v gs , i d = 250 $ 2.0 -- 4.0 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 1 a -- 4.0 5.0 ? g fs forward transconductance v ds = 30 v i d = 1 a -- 1.2 -- s off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 $ 650 -- -- v i dss zero gate voltage drain current v ds = 650 v, v gs = 0 v -- -- 10 $ v ds = 520 v, t c = 125 e -- -- 100 $ i gss gate-body leakage current v gs = 30 v, v ds = 0 v -- -- 100 na dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 290 -- pf c oss output capacitance -- 37 -- pf c rss reverse transfer capacitance -- 4.5 -- pf switching characteristics t d(on) turn-on time v ds = 325 v, i d = 2 a, r g = 25 ? (note 4,5) -- 16 -- ns t r turn-on rise time -- 17 -- ns t d(off) turn-off delay time -- 28 -- ns t f turn-off fall time -- 20 -- ns q g total gate charge v ds = 520 v, i d = 2 a, v gs = 10 v (note 4,5) -- 6.5 -- nc q gs gate-source charge -- 1.5 -- nc q gd gate-drain charge -- 2.2 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 2 a i sm maximum pulsed drain-source diode forward current -- -- 8 v sd drain-source diode forward voltage v gs = 0 v, i s = 2 a -- -- 1.4 v trr reverse recovery time v gs = 0 v, i s = 2 a di f /dt = 100 a/ v -- 200 -- ns qrr reverse recovery charge -- 0.7 -- & notes : 1. repetitive rating : pulse width limited by maximum junction temperature 2. l=50mh, i as =2a, v dd =50v, r g =25 : , starting t j =25 q c 3. i sd ? $ g l g w ? $ v 9 dd ? % 9 dss , starting t j =25 q c 4. pulse test : pulse width ? v ' x w \ & \ f o h ? 5. essentially independent of operating temperature electrical characteristics t j =25 e unless otherwise specified
q?v~zy??q?v?_ra]?????qcabgq HFS2N65FS typical characteristics figure 1. on region characteristics figure 2. transfer characteristics figure 3. on resistance variation vs drain current and gate voltage figure 4. body diode forward voltage variation with source current and temperature figure 5. capacitance characteristics figur e 6. gate charge characteristics 01234567 0 2 4 6 8 10 12 v gs , gate-source voltage [v] q g , total gate charge [nc] * note : i d = 2.0a v ds = 325v v ds = 130v v ds = 520v 10 -1 10 0 10 1 0 100 200 300 400 500 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd * note ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitances [pf] v ds , drain-source voltage [v] 2345678910 0.1 1 -25 o c 25 o c * notes : 1. v ds = 30v 2. 300us pulse test v gs , gate-source voltage [v] i d , drain current [a] 150 o c 0.20.40.60.81.01.21.41.61.8 0.1 1 25 o c * notes : 1. v gs = 0v 2. 300us pulse test v sd , source-drain voltage [v] i dr , reverse drain current [a] 150 o c 10 0 10 1 10 -1 10 0 10 1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v bottom : 5.0 v * notes : 1. 300us pulse test 2. t c = 25 o c i d , drain current [a] v ds , drain-source voltage [v] 012345 0 3 6 9 12 i d , drain current[a] r ds(on) [ : ], drain-source on-resistance v gs = 10v v gs = 20v * note : t j = 25 o c
q?v~zy??q?v?_ra]?????qcabgq HFS2N65FS typical characteristics (continued) -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2
note : 1. v gs = 0 v 2. i d = 250 p a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5
note : 1. v gs = 10 v 2. i d = 1 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 100 ms dc 10 ms 1 ms 100 p s operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 i d , drain current [a] t c , case temperature [ o c] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * notes : 1. z t jc (t) = 5.5 o c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z t jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z t jc (t), thermal response t 1 , square wave pulse duration [sec] figure 7. breakdown voltage variation vs temperature figure 8. on-resistance variation vs temperature figure 9. maximum safe operating area figure 10. maximum drain current vs case temperature figure 11. transient thermal response curve
q?v~zy??q?v?_ra]?????qcabgq HFS2N65FS fig 12. gate charge test circuit & waveform fig 13. resistive switching test circuit & waveforms fig 14. unclamped inductive switching test circuit & waveforms e as =l l i as 2 ---- 2 1 -------------------- bv dss -- v dd bv dss v in v ds 10% 90% t d(on) t r t on t off t d(off) t f charge v gs 10v q g q gs q gd v dd v ds bv dss t p v dd i as v ds (t) i d (t) time v dd ( 0.5 rated v ds ) 10v v ds r l dut r g 3ma v gs dut v ds 300nf .
200nf 12v same type as dut 10v dut r g l i d
q?v~zy??q?v?_ra]?????qcabgq HFS2N65FS fig 15. peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i s controlled by pulse period v dd l i s 10v v gs ( driver ) i s ( dut ) v ds ( dut ) v dd body diode forward voltage drop v f i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period --------------------------
q?v~zy??q?v?_ra]?????qcabgq HFS2N65FS package dimension { v t y y w m z g { v t y y w m z t m t g pin hole
q?v~zy??q?v?_ra]?????qcabgq HFS2N65FS version description date approved 0 new form 20161028 ygcho 1 qqq 2 qqq 3 qqq 4 qqq 5 qqq 6 qqq 7 qqq 8 qqq 9 qqq 10 qqq revision history
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